Varian Ion Implant

Varian

Varian Ion Implant Introduction

The Varian implant systems are proven platforms with a wide range of processes utilized by a large global install base. More than a production tool, the Varian systems will be an implant contributor to your production line for years to come.

Benefits:

  • Production-proven solution
  • Industry lowest CoO
  • High Throughput

OEM Group offers the following services:

  • Single-wafer processing
  • Tool Sales
  • Upgrades
  • Parts Supply: Consumable & Non Consumable
  • Repair Service: Remedial & Contract Support
  • Exchange & Refurbishments:  Disks, Power Supplies
  • Tool Moves & Installations
  • Refurbishments:  In-situ Overhauls
  • Engineering & Technical Support
  • Accel Columns

OEM Group owns all IP and product stewardship for these Varian Products:

  • Mid Current: A200, DF/CF Series, 350D, 350 DE, 300 XP
  • High Current: 80-10, 120-10, 160-10, 200-10, 80XP, 120XP, 160XP
  • High Frequency: 400/500 XP, G1500, G1510

Applications:

  • Power Device
  • Memory
  • Logic
  • Analog
  • Discrete
  • MEMS

Wafer Sizes: 100mm, 125mm, and 150mm

Medium Current: 350D

  • Dopant Species: B+, As+, P+
  • Energy: 35 – 200 keV
  • Variable Extraction: 10 – 35 keV
  • Beam Current Max: 1.5mA As+, P+; 0.6mA B+
  • Dose Range: 1E11 to 1E15 at/cm2
  • Dose Uniformity: 1σ< 0.75%
  • Dose Repeatability: 1σ< 0.75%

High Current – Batch XP Series

(80XP, 120XP, 160XP, and 180XP)

Maximum Beam Current

Energy Range (Dopant)

160 – 180 kV

60 – 160kV

40 – 120kV

80XP, 10-80kV (B+)

2 mA

5 mA

5 mA

120XP, 10-120kV (As+, P+)

5 mA

10 mA

10 mA

160XP, 10-160kV (Sb+)

N/A

5 mA

5 mA (to 80kV max.)

180XP, 10-180kV (BF2+)

2 mA

7 mA

7 mA

Dopant Species

Implant Dose Accuracy

B+, BF2, As+, P+, Sb+

Range

1E12 – 1E17

Uniformity

High Dose (>1E14 ions/cm2)

< 1.0%

Low Dose (<1E14 ions/cm2)

< 2.0%

Repeatability

< 1.0%

(All processes including photoresist and insulating surfaces)

Varian 350D Implant